Dr. Gilboa is the Vice-President of Engineering and Technology at Real-Time Radiography and is responsible for the development of the company’s X-ray detectors technology.  Dr. Gilboa has more than 20 years experience in silicon (Si) semiconductor processing for VLSI (Very Large Scale Integrated Circuits), Indium Antimonite (InSb), Mercury Cadmium Telluride (MCT) and semiconductor materials for infrared detectors. He was VP of Technology at Steag CVD in Israel, where he was responsible for the development of Rapid Thermal Chemical Vapor Deposition (RTCVD) hardware and processes. The system is used for the deposition of thin Silicon Oxide (SiO2) and Silicon Nitride (Si3N4) dielectric films, and  poly silicon films (Si).  Prior to these positions he was a process development manager at Applied Materials in Santa Clara Ca. and Material Research Corporation in Orangeburg NY. He was responsible for a revolutionary development of sputtering tools for various barrier layers such as Titanium Nitride (TiN) and Titanium Tungsten (TiW), multi-level metals such as Aluminum (Al) and Copper (Cu), and magnetron CVD for dielectric films such as Silicon Oxide and Nitride. Dr Gilboa was a research scientist at Rafael Institute in Israel where he was responsible for the development of Surface Acoustic Waves (SAW) devices and Infrared (IR) Detectors.

Dr. Gilboa received a Ph.D. in Electrical Engineering from Rensselaer Polytechnic Institute, Troy, New York, and M.Sc. and B.Sc, both in Electrical Engineering from the Technion, Israel. He also holds a B.Sc. in Physics and Mathematics from Hebrew University in Jerusalem.